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  Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions

Baumann, T. M., Harman, Z., Stark, J., Beilmann, C., Liang, G., Mokler, P., et al. (2014). Contributions of dielectronic, trielectronic, and metastable channels to the resonant intershell recombination of highly charged silicon ions. Physical Review A, 90(5): 052704. doi:10.1103/PhysRevA.90.052704.

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Baumann, Thomas M.1, 2, Author           
Harman, Zoltán3, 4, Author           
Stark, Julian5, Author           
Beilmann, Christian5, Author           
Liang, Guiyun6, Author
Mokler, Paul5, Author           
Ullrich, Joachim7, Author
Crespo López-Urrutia, José R.5, Author           
Affiliations:
1Division Prof. Dr. Joachim H. Ullrich, MPI for Nuclear Physics, Max Planck Society, ou_904547              
22National Superconducting Cyclotron Laboratory, Michigan State University, 640 South Shaw Lane, East Lansing, Michigan 48824, USA, ou_persistent22              
3Division Prof. Dr. Christoph H. Keitel, MPI for Nuclear Physics, Max Planck Society, ou_904546              
4ExtreMe Matter Institute EMMI, Planckstrasse 1, 64291 Darmstadt, Germany, ou_persistent22              
5Division Prof. Dr. Thomas Pfeifer, MPI for Nuclear Physics, Max Planck Society, ou_2025284              
6Key Laboratory of Optical Astronomy, National Astronomical Observatories, CAS, Beijing, China, ou_persistent22              
7Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany, ou_persistent22              

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 MPINP: Research group Z. Harman – Division C. H. Keitel
 Abstract: Intershell, resonant electronic recombination is studied experimentally in an electron-beam ion trap for O-like Si6+ to He-like Si12+ ions at plasma temperatures in the megakelvin range similar to those found in the solar radiative zone and is compared to extended multiconfiguration Dirac-Fock and relativistic configuration-interaction predictions. For this low-Z ion, the higher-order electronic recombination processes are comparable in strength to the first-order one. The ratio of trielectronic to dielectric recombination for B-like species agrees well with predictions, whereas for C-like ions the measured value is only half as large. This difference is explained by the influence of metastable states populated in the recombining plasma.

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Language(s): eng - English
 Dates: 2014-11-07
 Publication Status: Published online
 Pages: 12
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevA.90.052704
 Degree: -

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Title: Physical Review A
  Other : Phys. Rev. A
Source Genre: Journal
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Publ. Info: New York, NY : American Physical Society
Pages: - Volume / Issue: 90 (5) Sequence Number: 052704 Start / End Page: - Identifier: ISSN: 1050-2947
CoNE: https://pure.mpg.de/cone/journals/resource/954925225012_2