Origins of electrostatic potential wells at dislocations in polycrystalline 
Cu(In,Ga)Se2 thin films

Dietrich, Jens; Abou-Ras, Daniel; Schmidt, Sebastian S.; Rissom, T.; Unold, Thomas; Cojocaru-Mirédin, Oana; Niermann, Tore; Lehmann, Michael M.; Koch, Christoph T.; Boit, Christian

doi:10.1063/1.4867398

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Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se₂ thin films

Dietrich, J., Abou-Ras, D., Schmidt, S. S., Rissom, T., Unold, T., Cojocaru-Mirédin, O., et al. (2014). Origins of electrostatic potential wells at dislocations in polycrystalline Cu(In,Ga)Se₂ thin films. Journal of Applied Physics, 115(10): 103507. doi:10.1063/1.4867398.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-926D-2 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0024-926E-F

Genre: Journal Article

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Creators:
Dietrich, Jens^{1, 2}, Author
Abou-Ras, Daniel², Author
Schmidt, Sebastian S.², Author
Rissom, T.², Author
Unold, Thomas², Author
Cojocaru-Mirédin, Oana³, Author
Niermann, Tore⁴, Author
Lehmann, Michael M.⁴, Author
Koch, Christoph T.⁵, Author
Boit, Christian⁶, Author

Affiliations:
1Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany , Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany, ou_persistent22
2Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863381
3Interface Design in Solar Cells, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863387
4Institut für Optik und Atomare Physik, Technische Universität Berlin, Sekretariat ER 1-1, Strasse des 17, Juni 135, 10623 Berlin, Germany, ou_persistent22
5Institut für Experimentelle Physik, Universität Ulm, Albert-Einstein-Allee 11, 89081 Ulm, Germany, ou_persistent22
6Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany, ou_persistent22

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Language(s): eng - English

Dates: Date issued: 2014-03-14

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.4867398

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Title: Journal of Applied Physics

Abbreviation : J. Appl. Phys.

Source Genre: Journal

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Pages: - Volume / Issue: 115 (10) Sequence Number: 103507 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880