English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Robust 2D Topological Insulators in van der Waals Heterostructures

Kou, L., Wu, S.-C., Felser, C., Frauenheim, T., Chen, C., & Yan, B. (2014). Robust 2D Topological Insulators in van der Waals Heterostructures. ACS Nano, 8(10), 10448-10454. doi:10.1021/nn503789v.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0024-981C-6 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-625C-9
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Kou, Liangzhi1, Author
Wu, Shu-Chun2, Author              
Felser, Claudia3, Author              
Frauenheim, Thomas1, Author
Chen, Changfeng1, Author
Yan, Binghai4, Author              
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
4Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

Content

show
hide
Free keywords: -
 Abstract: We predict a family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X = Cl, Br, and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity-induced topological states. First-principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer a unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers ideas for innovative device designs.

Details

show
hide
Language(s): eng - English
 Dates: 2014-09-162014-09-28
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000343952600079
DOI: 10.1021/nn503789v
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: ACS Nano
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 8 (10) Sequence Number: - Start / End Page: 10448 - 10454 Identifier: Other: 1936-0851
CoNE: /journals/resource/1936-0851