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  Robust 2D Topological Insulators in van der Waals Heterostructures

Kou, L., Wu, S.-C., Felser, C., Frauenheim, T., Chen, C., & Yan, B. (2014). Robust 2D Topological Insulators in van der Waals Heterostructures. ACS Nano, 8(10), 10448-10454. doi:10.1021/nn503789v.

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 Urheber:
Kou, Liangzhi1, Autor
Wu, Shu-Chun2, Autor           
Felser, Claudia3, Autor           
Frauenheim, Thomas1, Autor
Chen, Changfeng1, Autor
Yan, Binghai4, Autor           
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
4Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

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 Zusammenfassung: We predict a family of robust two-dimensional (2D) topological insulators in van der Waals heterostructures comprising graphene and chalcogenides BiTeX (X = Cl, Br, and I). The layered structures of both constituent materials produce a naturally smooth interface that is conducive to proximity-induced topological states. First-principles calculations reveal intrinsic topologically nontrivial bulk energy gaps as large as 70-80 meV, which can be further enhanced up to 120 meV by compression. The strong spin-orbit coupling in BiTeX has a significant influence on the graphene Dirac states, resulting in the topologically nontrivial band structure, which is confirmed by calculated nontrivial Z2 index and an explicit demonstration of metallic edge states. Such heterostructures offer a unique Dirac transport system that combines the 2D Dirac states from graphene and 1D Dirac edge states from the topological insulator, and it offers ideas for innovative device designs.

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Sprache(n): eng - English
 Datum: 2014-09-162014-09-28
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000343952600079
DOI: 10.1021/nn503789v
 Art des Abschluß: -

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Titel: ACS Nano
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Washington, DC : American Chemical Society
Seiten: - Band / Heft: 8 (10) Artikelnummer: - Start- / Endseite: 10448 - 10454 Identifikator: Anderer: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851