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  Structural evolvement and thermoelectric properties of Cu3-xSnxSe3 compounds with diamond-like crystal structures

Fan, J., Schnelle, W., Antonyshyn, I., Veremchuk, I., Carrillo-Cabrera, W., Shi, X., et al. (2014). Structural evolvement and thermoelectric properties of Cu3-xSnxSe3 compounds with diamond-like crystal structures. Dalton Transactions, 43(44), 16788-16794. doi:10.1039/c4dt01457j.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0024-9888-1 Version Permalink: http://hdl.handle.net/21.11116/0000-0000-3582-1
Genre: Journal Article

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 Creators:
Fan, Jing1, Author              
Schnelle, Walter2, Author              
Antonyshyn, Iryna3, Author              
Veremchuk, Igor4, Author              
Carrillo-Cabrera, Wilder5, Author              
Shi, Xun6, Author              
Grin, Yuri7, Author              
Chen, Lidong6, Author
Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404              
2Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
3Iryna Antonyshyn, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863412              
4Igor Veremchuk, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863411              
5Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863405              
6External Organizations, ou_persistent22              
7Juri Grin, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863413              

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 Abstract: Polycrystalline samples of Cu3-xSnxSe3 were synthesized in the composition range x = 0.87-1.05. A compositionally induced evolvement from tetragonal via cubic to monoclinic crystal structures is observed, when the composition changes from a Cu-rich to a Sn-rich one. The Cu3-xSnxSe3 materials show a metal-to-semiconductor transition with increasing x. Electronic transport properties are governed by the charge-carrier concentration which is well described by a linear dispersion-band model. The lattice component of the thermal conductivity is practically independent of x which is attributed to the opposite influence of the atomic ordering and the inhomogeneous distribution of the Cu-Se or Sn-Se bonds with different polarities in the crystal structure. The highest thermoelectric figure of merit ZT of 0.34 is achieved for x = 1.025 at 700 K.

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Language(s): eng - English
 Dates: 2014-10-08
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000344250800029
DOI: 10.1039/c4dt01457j
 Degree: -

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Title: Dalton Transactions
  Other : Dalton Trans.
Source Genre: Journal
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Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 43 (44) Sequence Number: - Start / End Page: 16788 - 16794 Identifier: ISSN: 1477-9226
CoNE: /journals/resource/954925269323