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  Interface structure and chemistry of GaN on Ge(111)

Zhang, S., Zhang, Y., Cui, Y., Freysoldt, C., Neugebauer, J., Lieten, R. R., et al. (2013). Interface structure and chemistry of GaN on Ge(111). Physical Review Letters, 111(25): 256101. doi:10.1103/PhysRevLett.111.256101.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0024-A134-D Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-23E7-7
Genre: Journal Article

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 Creators:
Zhang, Siyuan1, Author              
Zhang, Yucheng1, 2, Author              
Cui, Ying3, Author              
Freysoldt, Christoph3, Author              
Neugebauer, Jörg4, Author              
Lieten, Ruben R.5, Author              
Barnard, Jonathan S.1, Author              
Humphreys, Colin J.1, Author              
Affiliations:
1Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge, UK, ou_persistent22              
2Electron Microscopy Center, EMPA, Dübendorf CH-8600, Switzerland, ou_persistent22              
3Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863342              
4Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863337              
5IMEC, KU Leuven, Kapeldreef 75, 3001 Heverlee, Belgium, ou_persistent22              

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Language(s): eng - English
 Dates: 2013-08-312013-12-16
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1103/PhysRevLett.111.256101
 Degree: -

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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 111 (25) Sequence Number: 256101 Start / End Page: - Identifier: ISSN: 0031-9007
DOI: 10.1103/PhysRevLett.111.256101
CoNE: /journals/resource/954925433406_1