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  Evidence of surface transport and weak antilocalization in a single crystal of the Bi2Te2Se topological insulator

Shekhar, C., ViolBarbosa, C. E., Yan, B., Ouardi, S., Schnelle, W., Fecher, G. H., et al. (2014). Evidence of surface transport and weak antilocalization in a single crystal of the Bi2Te2Se topological insulator. Physical Review B, 90(16): 165140, pp. 1-6. doi:10.1103/PhysRevB.90.165140.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0024-9C6B-9 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-F7F6-C
Genre: Journal Article

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 Creators:
Shekhar, Chandra1, Author              
ViolBarbosa, C. E.2, Author              
Yan, Binghai3, Author              
Ouardi, Siham4, Author              
Schnelle, W.5, Author              
Fecher, Gerhard H.6, Author              
Felser, Claudia7, Author              
Affiliations:
1Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              
4Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439              
5Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
6Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
7Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: Topological insulators are known for their metallic surface states, a result of strong spin-orbit coupling, that exhibit unique surface transport phenomenon. However, these surface transport phenomena are buried in the presence of metallic bulk conduction. We synthesized very high quality Bi2Te2Se single crystals by using a modified Bridgman method that possess high bulk resistivity of >20 Omega cm below 20 K, whereas the bulk is mostly inactive and surface transport dominates. The temperature dependence of resistivity follows an activation law like a gap semiconductor in temperature range 20-300 K. To extract the surface transport from that of the bulk, we designed a special measurement geometry to measure the resistance and found that single-crystal Bi2Te2Se exhibits a crossover from bulk to surface conduction at 20 K. Simultaneously, the material also shows strong evidence of weak antilocalization in magnetotransport owing to the protection against scattering by conducting surface states. This simple geometry facilitates finding evidence of surface transport in topological insulators, which are promising materials for future spintronic applications.

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Language(s): eng - English
 Dates: 2014-10-30
 Publication Status: Published in print
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Title: Physical Review B
  Other : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 90 (16) Sequence Number: 165140 Start / End Page: 1 - 6 Identifier: ISSN: 1098-0121
CoNE: /journals/resource/954925225008