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  Mapping Orientational Order of Charge-Probed Domains in a Semiconducting Polymer

Martino, N., Fazzi, D., Sciascia, C., Luzio, A., Antognazza, M. R., & Caironi, M. (2014). Mapping Orientational Order of Charge-Probed Domains in a Semiconducting Polymer. ACS Nano, 8(6), 5968-5978. doi:10.1021/nn5011182.

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nn5011182_si_001.pdf (Supplementary material), 3MB
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 Creators:
Martino, Nicola1, 2, Author
Fazzi, Daniele1, 3, Author           
Sciascia, Calogero1, Author
Luzio, Alessandro1, Author
Antognazza, Maria Rosa1, Author
Caironi, Mario1, Author
Affiliations:
1Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via G. Pascoli 70/3, 20133 Milano, Italy, ou_persistent22              
2Dipartimento di Fisica, Politecnico di Milano, Piazza L. da Vinci, 32, 20133 Milano, Italy, ou_persistent22              
3Research Department Thiel, Max-Planck-Institut für Kohlenforschung, Max Planck Society, ou_1445590              

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Free keywords: charge transport . organic transistor . polymer semiconductor . thin film microstructure . charge modulation spectroscopy
 Abstract: Structure–property relationships are of fundamental importance to develop quantitative models describing charge transport in organic semiconductor based electronic devices, which are among the best candidates for future portable and lightweight electronic applications. While microstructural investigations, such as those based on X-rays, electron microscopy, or polarized optical probes, provide necessary information for the rationalization of transport in macromolecular solids, a general model predicting how charge accommodates within structural maps is not yet available. Therefore, techniques capable of directly monitoring how charge is distributed when injected into a polymer film and how it correlates to structural domains can help fill this gap. Supported by density functional theory calculations, here we show that polarized charge modulation microscopy (p-CMM) can unambiguously and selectively map the orientational order of the only conjugated segments that are probed by mobile charge in the few nanometer thick accumulation layer of a high-mobility polymer-based field-effect transistor . Depending on the specific solvent-induced microstructure within the accumulation layer, we show that p-CMM can image charge-probed domains that extend from submicrometer to tens of micrometers size, with markedly different degrees of alignment. Wider and more ordered p-CMM domains are associated with improved carrier mobility, as extracted from device characteristics. This observation evidences the unprecedented opportunity to correlate, directly in a working device, electronic properties with structural information on those conjugated segments involved in charge transport at the buried semiconductor–dielectric interface of a field-effect device.

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Language(s): eng - English
 Dates: 2014-02-252014-05-112014-05-122014-06-24
 Publication Status: Issued
 Pages: 11
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1021/nn5011182
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Title: ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 8 (6) Sequence Number: - Start / End Page: 5968 - 5978 Identifier: ISSN: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851