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  Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation

Ostler, M., Koch, R. J., Speck, F., Fromm, F., Vita, H., Hundhausen, M., et al. (2012). Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649-652. doi:10.4028/www.scientific.net/MSF.717-720.649.

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 Creators:
Ostler, Markus1, Author
Koch, Roland J.1, Author
Speck, Florian1, Author
Fromm, Felix1, Author
Vita, Hendrik2, Author           
Hundhausen, Martin1, Author
Horn, Karsten2, Author           
Seyller, Thomas1, Author
Affiliations:
1FAU Erlangen-Nürnberg, Technische Physik, Erwin-Rommel-Straße 1, 91058 Erlangen, Germany, ou_persistent22              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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Free keywords: ARPES, Graphen, Intercalation, Oxidation, Raman Spectroscopy, Si-Face, XPS
 Abstract: Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC interface is a well studied topic since successful intercalation has been shown for hydrogen [1-3]. Recently, intercalation was also shown for oxygen [4, 5]. We present ARPES, XPS and Raman spectroscopy studies to determine the quality of oxygen intercalated buffer layer samples in terms of decoupling and integrity of the transformed graphene layer. The decoupling effect is demonstrated by ARPES measurements showing a graphene-like π band. XPS shows whether the oxidation takes place in the buffer layer or at the interface. Raman spectroscopy is well suited to investigate oxygen induced defects in graphene-like material.

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Language(s): eng - English
 Dates: 2012-05-142012
 Publication Status: Published in print
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Degree: -

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Title: Materials Science Forum
  Other : Mater. Sci. Forum
Source Genre: Journal
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Publ. Info: Aedermannsdorf, Switzerland : Trans Tech Publications
Pages: - Volume / Issue: 717-720 Sequence Number: - Start / End Page: 649 - 652 Identifier: ISSN: 0255-5476
CoNE: https://pure.mpg.de/cone/journals/resource/954928550320