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  Crystal structure characterisation of filtered arc deposited alumina coatings: temperature and bias voltage

Brill, R., Koch, F., Mazurelle, J., Levchuk, D., Balden, M., Yamada-Takamura, Y., et al. (2003). Crystal structure characterisation of filtered arc deposited alumina coatings: temperature and bias voltage. Surface and Coatings Technology, 174-175, 606-610. doi:10.1016/S0257-8972(03)00539-5.

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 Creators:
Brill, R.1, Author              
Koch, F.1, Author              
Mazurelle, J.1, Author              
Levchuk, D.1, Author              
Balden, M.1, Author              
Yamada-Takamura, Y.2, Author
Maier, H.3, Author
Bolt, H.1, Author              
Affiliations:
1Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856328              
2Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan, ou_persistent22              
3Max Planck Society, ou_persistent13              

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Free keywords: Proceedings of the Eight International Conference on Plasma Surface Engineering, Garmisch-Partenkirchen, 2002-09-09 to 2002-09-13
 Abstract: Using a filtered vacuum arc deposition device, stoichiometric aluminum oxide (Al₂O₃) films, with thickness ranging from 20 nm to several microns, were produced under various substrate bias voltages and temperatures. Analysis of the resulting alumina crystal structures was performed with transmission electron microscopy, Fourier transform infrared spectroscopy and X-ray diffraction. Depending on the negative substrate bias voltage, the deposition temperature required to form -Al₂O₃ could be reduced. A crystal phase diagram showing the effect of bias and temperature is presented. Also, preliminary hydrogen permeation measurements of these coatings deposited on thin palladium foil show a good barrier performance as compared with uncoated samples.

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Language(s): eng - English
 Dates: 2003
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Degree: -

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Title: Surface and Coatings Technology
Source Genre: Journal
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Publ. Info: Copyright © 2003 Elsevier Science B.V. All rights reserved.
Pages: - Volume / Issue: 174-175 Sequence Number: - Start / End Page: 606 - 610 Identifier: -