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  Fundamental Growth Mechanisms during PECVD of Carbon Thin Films

von Keudell, A., Meier, M., & Hopf, C. (2001). Fundamental Growth Mechanisms during PECVD of Carbon Thin Films.

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 Creators:
von Keudell, A.1, 2, Author              
Meier, M.1, 2, Author              
Hopf, C.1, 2, Author              
Affiliations:
1Centre for Interdisciplinary Plasma Science (CIPS), Max Planck Institute for Plasma Physics, Max Planck Society, ou_2074325              
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288              

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 Dates: 2001
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Internal
 Identifiers: eDoc: 288639
 Degree: -

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Title: 13th International Colloquium on Plasma Processes
Place of Event: Antibes
Start-/End Date: 2001-06-10 - 2001-06-14

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Title: CIP'2001 proceedings
Source Genre: Issue
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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 137 - 141 Identifier: -

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Title: Le Vide. Science, Technique et Application
Source Genre: Journal
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Pages: - Volume / Issue: (Numéro spécial) Sequence Number: - Start / End Page: - Identifier: ISSN: 1266-0167