Fundamental Growth Mechanisms during PECVD of Carbon Thin Films

von Keudell, A.; Meier, M.; Hopf, C.

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Fundamental Growth Mechanisms during PECVD of Carbon Thin Films

von Keudell, A., Meier, M., & Hopf, C. (2001). Fundamental Growth Mechanisms during PECVD of Carbon Thin Films.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-585C-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-585D-1

Genre: Conference Paper

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Creators:
von Keudell, A.^{1, 2}, Author
Meier, M.^{1, 2}, Author
Hopf, C.^{1, 2}, Author

Affiliations:
1Centre for Interdisciplinary Plasma Science (CIPS), Max Planck Institute for Plasma Physics, Max Planck Society, ou_2074325
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288

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Dates: Date issued: 2001

Publication Status: Issued

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Rev. Type: Internal

Identifiers: eDoc: 288639

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Title: 13th International Colloquium on Plasma Processes

Place of Event: Antibes

Start-/End Date: 2001-06-10 - 2001-06-14

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Title: CIP'2001 proceedings

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 137 - 141 Identifier: -

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Title: Le Vide. Science, Technique et Application

Source Genre: Journal

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Pages: - Volume / Issue: (Numéro spécial) Sequence Number: - Start / End Page: - Identifier: ISSN: 1266-0167