Theoretical Analysis of the Embedded Layer Formed by High-Energy Au 
Implantation into Si(II)

Nakagawa, S. T.; Nakano, S.; Ogiso, H.; Iwaki, M.; Hashimoto, M.; Eckstein, W.

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Theoretical Analysis of the Embedded Layer Formed by High-Energy Au Implantation into Si(II)

Nakagawa, S. T., Nakano, S., Ogiso, H., Iwaki, M., Hashimoto, M., & Eckstein, W. (2000). Theoretical Analysis of the Embedded Layer Formed by High-Energy Au Implantation into Si(II). Review of Scientific Instruments, 71, 793-796. Retrieved from http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=RSINAK000071000002000793000001&idtype=cvips&prog=normal.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-5E88-B Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-5E89-9

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Urheber:
Nakagawa, S. T.¹, Autor
Nakano, S.¹, Autor
Ogiso, H.¹, Autor
Iwaki, M.¹, Autor
Hashimoto, M.¹, Autor
Eckstein, W.², Autor

Affiliations:
1Graduate School of Science, Okayama University of Science, Okayama, Japan; Mechanical Engineering Laboratory, Tsukuba, Japan; National Institute for Advanced Interdisciplinary Research, Tsukuba, Japan; The Institute of Physical and Chemical Research, Wako-shi, Japan; Graduate School of Science, Okayama University of Science, Okayama, Japan;, ou_persistent22
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288