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  Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc

Adelhelm, C., Pickert, T., Koch, F., Balden, M., Jahn, S., Rinke, M., et al. (2011). Influence of deposition temperature and bias voltage on the crystalline phase of Er2O3 thin films deposited by filtered cathodic arc. Journal of Nuclear Materials, 417(1-3), 798-801. doi:10.1016/j.jnucmat.2010.12.163.

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 Creators:
Adelhelm, C.1, 2, Author           
Pickert, T.1, Author           
Koch, F.1, 2, Author           
Balden, M.1, 2, Author           
Jahn, S.1, Author           
Rinke, M.3, Author
Maier, H.4, Author
Affiliations:
1Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856328              
2Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856327              
3Forschungszentrum Karlsruhe, Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany, ou_persistent22              
4Max Planck Society, ou_persistent13              

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Free keywords: 14th International Conference on Fusion Reactor Materials (ICFRM-14), Sapporo, 2009-09-06 to 2009-09-11
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Language(s): eng - English
 Dates: 2011
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Degree: -

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Title: Journal of Nuclear Materials
Source Genre: Journal
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Publ. Info: Elsevier B.V.
Pages: - Volume / Issue: 417 (1-3) Sequence Number: - Start / End Page: 798 - 801 Identifier: -