Layer Morphology Analysis of Sputter-eroded Silicon Gratings using Rutherford 
Backscattering

Langhuth, H.; Mayer, M.; Lindig, S.

doi:10.1016/j.nimb.2011.05.002

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Layer Morphology Analysis of Sputter-eroded Silicon Gratings using Rutherford Backscattering

Langhuth, H., Mayer, M., & Lindig, S. (2011). Layer Morphology Analysis of Sputter-eroded Silicon Gratings using Rutherford Backscattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(16), 1811-1817. doi:10.1016/j.nimb.2011.05.002.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-EAC7-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-EAC8-5

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Creators:
Langhuth, H.^{1, 2}, Author
Mayer, M.^{1, 2}, Author
Lindig, S.^{1, 2}, Author

Affiliations:
1Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856327
2Material Research (MF), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856328

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Language(s): eng - English

Dates: Date issued: 2011

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 535382
DOI: 10.1016/j.nimb.2011.05.002
URI: http://www.sciencedirect.com/science/article/pii/S0168583X11004952

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Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Source Genre: Journal

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Publ. Info: Elsevier

Pages: - Volume / Issue: 269 (16) Sequence Number: - Start / End Page: 1811 - 1817 Identifier: -