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  Mechanisms of layer growth in microwave-PECVD silan plasmas – Experiment and simulation

Ramisch, E., Mutzke, A., Schneider, R., & Stroth, U. (2013). Mechanisms of layer growth in microwave-PECVD silan plasmas – Experiment and simulation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 316, 249-256. doi:10.1016/j.nimb.2013.09.013.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0026-E293-8 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0026-E294-6
Genre: Journal Article

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 Creators:
Ramisch, E.1, Author
Mutzke, A.2, Author              
Schneider, R.3, Author              
Stroth, U.4, Author              
Affiliations:
1Institut für Plasmaforschung, Universität Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart, Germany; Institut of Physics, Ernst–Moritz–Arndt University, Felix-Haussdorffstr. 1, 17491 Greifswald, Germany, ou_persistent22              
2Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856287              
3External Organizations, ou_persistent22              
4Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856327              

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Language(s): eng - English
 Dates: 2013
 Publication Status: Published in print
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 Table of Contents: -
 Rev. Method: Peer
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Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Source Genre: Journal
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Publ. Info: Elsevier B.V.
Pages: - Volume / Issue: 316 Sequence Number: - Start / End Page: 249 - 256 Identifier: -