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  Modeling of altered layer formation during reactive ion etching of GaAs

Mutzke, A., Rai, A., Schneider, R., Angelin, E., & Hippler, R. (2012). Modeling of altered layer formation during reactive ion etching of GaAs. Applied Surface Science, 263, 626-632. doi:10.1016/j.apsusc.2012.09.123.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-E60F-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0026-E610-1
Genre: Journal Article

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 Creators:
Mutzke, A.1, Author           
Rai, A.1, Author           
Schneider, R.2, Author           
Angelin, E.3, Author
Hippler, R.3, Author
Affiliations:
1Stellarator Theory (ST), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856287              
2External Organizations, ou_persistent22              
3Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str. 6, D-17489 Greifswald, GErmany, ou_persistent22              

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Language(s): eng - English
 Dates: 2012
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 614876
DOI: 10.1016/j.apsusc.2012.09.123
URI: http://dx.doi.org/10.1016/j.apsusc.2012.09.123
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Title: Applied Surface Science
Source Genre: Journal
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Publ. Info: Elsevier B.V.
Pages: - Volume / Issue: 263 Sequence Number: - Start / End Page: 626 - 632 Identifier: -