Direct insertion of SiH3 radicals into strained Si-Si surface bonds during 
plasma deposition of hydrogenated amorphous silicon films

Keudell, A. von; Abelson, J. R.

doi:10.1103/PhysRevB.59.5791

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Direct insertion of SiH₃ radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films

Keudell, A. v., & Abelson, J. R. (1999). Direct insertion of SiH₃ radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films. Physical Review B, 59(8), 5791-5798. doi:10.1103/PhysRevB.59.5791.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-85EF-1 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-85F0-C

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Urheber:
Keudell, A. von¹, Autor
Abelson, J. R.², Autor

Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288
2Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801; Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, ou_persistent22