Silicide formation by high-temperature reaction of Rh with model SiO2 films

Labich, S.; Kohl, A.; Taglauer, E.; Knözinger, H.

doi:10.1063/1.476784

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Silicide formation by high-temperature reaction of Rh with model SiO₂ films

Labich, S., Kohl, A., Taglauer, E., & Knözinger, H. (1998). Silicide formation by high-temperature reaction of Rh with model SiO₂ films. Journal of Chemical Physics, 109(6), 2052-2055. doi:10.1063/1.476784.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-8819-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-881A-1

Genre: Journal Article

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Creators:
Labich, S.¹, Author
Kohl, A.², Author
Taglauer, E.², Author
Knözinger, H.³, Author

Affiliations:
1External Organizations, ou_persistent22
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288
3Institut für Physikalische Chemie der Universität München, Sophienstrasse 11, D-80333 München, Germany, ou_persistent22

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Language(s): eng - English

Dates: Date issued: 1998

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 627489
DOI: 10.1063/1.476784
URI: http://dx.doi.org/10.1063/1.476784

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Title: Journal of Chemical Physics

Source Genre: Journal

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Pages: - Volume / Issue: 109 (6) Sequence Number: - Start / End Page: 2052 - 2055 Identifier: -