Ion-induced alkali-silicon interfaces: Atomistic simulations of collisional 
effects

Eckstein, W.; Hou, M.; Shulga, V. I.

doi:10.1016/S0168-583X(96)00635-0

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Ion-induced alkali-silicon interfaces: Atomistic simulations of collisional effects

Eckstein, W., Hou, M., & Shulga, V. I. (1996). Ion-induced alkali-silicon interfaces: Atomistic simulations of collisional effects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 119(4), 477-486. doi:10.1016/S0168-583X(96)00635-0.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-8C94-D Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-8C95-B

Genre: Journal Article

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Creators:
Eckstein, W.¹, Author
Hou, M., Author
Shulga, V. I., Author

Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288

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Language(s): eng - English

Dates: Date issued: 1996

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 626238
DOI: 10.1016/S0168-583X(96)00635-0
URI: http://www.sciencedirect.com/science/article/pii/S0168583X96006350

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Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Source Genre: Journal

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Pages: - Volume / Issue: 119 (4) Sequence Number: - Start / End Page: 477 - 486 Identifier: -