Interface formation in silicon by cesium bombardment

Mashkova, E. S.; Molchanov, V. A.; Shulga, V. I.; Benazeth, C.; Benazeth, N.; Cafarelli, P.; Eckstein, W.; Hou, M.

doi:10.1016/0168-583X(95)01549-3

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Interface formation in silicon by cesium bombardment

Mashkova, E. S., Molchanov, V. A., Shulga, V. I., Benazeth, C., Benazeth, N., Cafarelli, P., et al. (1996). Interface formation in silicon by cesium bombardment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 115(1-4), 519-522. doi:10.1016/0168-583X(95)01549-3.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-8D1E-2 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-8D1F-F

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Urheber:
Mashkova, E. S., Autor
Molchanov, V. A., Autor
Shulga, V. I., Autor
Benazeth, C., Autor
Benazeth, N., Autor
Cafarelli, P., Autor
Eckstein, W.¹, Autor
Hou, M., Autor

Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288