Computer simulation studies of low energy B implantation into amorphous and 
crystalline silicon

Gärtner, K.; Nitschke, M.; Eckstein, W.

doi:10.1016/0168-583X(93)95912-O

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Computer simulation studies of low energy B implantation into amorphous and crystalline silicon

Gärtner, K., Nitschke, M., & Eckstein, W. (1993). Computer simulation studies of low energy B implantation into amorphous and crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 83(1-2), 87-94. doi:10.1016/0168-583X(93)95912-O.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-9201-E Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-9202-C

Genre: Journal Article

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Creators:
Gärtner, K., Author
Nitschke, M., Author
Eckstein, W.¹, Author

Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288

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Language(s): eng - English

Dates: Date issued: 1993

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 631086
DOI: 10.1016/0168-583X(93)95912-O
URI: http://www.sciencedirect.com/science/article/pii/0168583X9395912O

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Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Source Genre: Journal

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Pages: - Volume / Issue: 83 (1-2) Sequence Number: - Start / End Page: 87 - 94 Identifier: -