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  The Role of Ion Bombardement during Deposition and Etchning in the SiH4H2/S(s) System: A Comparison between Experimental Results and Monte Carlo Computer Simulation

Ratz, G., Konwitchny, R., Moeller, W., & Veprek, S. (1991). The Role of Ion Bombardement during Deposition and Etchning in the SiH4H2/S(s) System: A Comparison between Experimental Results and Monte Carlo Computer Simulation. In U. Ehlemann, H. G. Lergon, & K. Wiesemann (Eds.), 10th International Symposium on Plasma Chemistry, Symposium Proceedings.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-9676-4 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-9677-2
Genre: Conference Paper

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 Creators:
Ratz, G., Author
Konwitchny, R., Author
Moeller, W.1, Author           
Veprek, S., Author
Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288              

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Language(s): eng - English
 Dates: 1991
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Internal
 Identifiers: eDoc: 630197
 Degree: -

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Title: 10th International Symposium on Plasma Chemistry (ISPC 10)
Place of Event: Bochum (DE)
Start-/End Date: 1991-08-04 - 1991-08-09

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Title: 10th International Symposium on Plasma Chemistry, Symposium Proceedings
Source Genre: Proceedings
 Creator(s):
Ehlemann, U., Editor
Lergon, H. G., Editor
Wiesemann, K., Editor
Affiliations:
-
Publ. Info: -
Pages: - Volume / Issue: - Sequence Number: 2.2-10 Start / End Page: - Identifier: -