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  SmO thin films: A flexible route to correlated flat bands with nontrivial topology

Kasinathan, D., Koepernik, K., Tjeng, L. H., & Haverkort, M. W. (2015). SmO thin films: A flexible route to correlated flat bands with nontrivial topology. Physical Review B, 91(19): 195127, pp. 1-8. doi:10.1103/PhysRevB.91.195127.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0027-9CEA-3 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-1744-9
Genre: Journal Article

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 Creators:
Kasinathan, D.1, Author              
Koepernik, Klaus2, Author
Tjeng, L. H.3, Author              
Haverkort, Maurits W.4, Author              
Affiliations:
1Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
2External Organizations, ou_persistent22              
3Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863452              
4Maurits Haverkort, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863455              

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 Abstract: Using density functional theory based calculations, we show that the correlated mixed-valent compound SmO is a three-dimensional strongly topological semimetal as a result of a 4f -5d band inversion at the X point. The [001] surface Bloch spectral density reveals two weakly interacting Dirac cones that are quasidegenerate at the (M) over bar point and another single Dirac cone at the (Gamma) over bar point. We also show that the topological nontriviality in SmO is very robust and prevails for a wide range of lattice parameters, making it an ideal candidate to investigate topological nontrivial correlated flat bands in thin-film form. Moreover, the electron filling is tunable by strain. In addition, we find conditions for which the inversion is of the 4f -6s type, making SmO to be a rather unique system. The similarities of the crystal symmetry and the lattice constant of SmO to the well studied ferromagnetic semiconductor EuO, makes SmO/EuO thin film interfaces an excellent contender towards realizing the quantum anomalous Hall effect in a strongly correlated electron system.

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Language(s): eng - English
 Dates: 2015-05-182015-05-18
 Publication Status: Published in print
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 91 (19) Sequence Number: 195127 Start / End Page: 1 - 8 Identifier: ISSN: 1098-0121
CoNE: /journals/resource/954925225008