The Mechanism of Electrochemical Oxygen Reduction: A Combined DFT and in-Situ 
ATR-IR Study on Model Semiconductor Surfaces Ge(100) and ZnO

Biedermann, Paul Ulrich; Nayak, Simantini; Erbe, Andreas

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The Mechanism of Electrochemical Oxygen Reduction: A Combined DFT and in-Situ ATR-IR Study on Model Semiconductor Surfaces Ge(100) and ZnO

Biedermann, P. U., Nayak, S., & Erbe, A. (2015). The Mechanism of Electrochemical Oxygen Reduction: A Combined DFT and in-Situ ATR-IR Study on Model Semiconductor Surfaces Ge(100) and ZnO. Talk presented at 227th ECS Meeting. Chicago, IL, USA. 2015-05-24 - 2015-05-28.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-AE3A-F Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0027-AE3B-D

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Urheber:
Biedermann, Paul Ulrich¹, Autor
Nayak, Simantini², Autor
Erbe, Andreas², Autor

Affiliations:
1Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863350
2Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863358