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  A soluble molecular variant of the semiconducting silicondiselenide.

Mondal, K. C., Roy, S., Dittrich, B., Maity, B., Dutta, S., Koley, D., et al. (2015). A soluble molecular variant of the semiconducting silicondiselenide. Chemical Science, 6(9), 5230-5234. doi:10.1039/C5SC01516B.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0027-D3F8-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002A-1CBF-0
Genre: Journal Article

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 Creators:
Mondal, K. C., Author
Roy, S., Author
Dittrich, B., Author
Maity, B., Author
Dutta, S., Author
Koley, D., Author
Vasa, S. K.1, Author              
Linser, R.1, Author              
Decherta, S., Author
Roesky, H. W., Author
Affiliations:
1Research Group of Solid-State NMR-2, MPI for Biophysical Chemistry, Max Planck Society, ou_1950286              

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 Abstract: Silicondiselenide is a semiconductor and exists as an insoluble polymer (SiSe2)n which is prepared by reacting elemental silicon with selenium powder in the temperature range of 400–850 °C. Herein, we report on the synthesis, isolation, and characterization of carbene stabilized molecular silicondiselenide in the form of (cAAC)2Si2Se4 (3) [cAAC = cyclic alkyl(amino)carbene]. 3 is synthesized via reaction of diatomic silicon(0) compound (cAAC)2Si2 (2) with black selenium powder at −78 °C to room temperature. The intensely orange colored compound 3 is soluble in polar organic solvents and stable at room temperature for a month under an inert atmosphere. 3 decomposes above 245 °C. The molecular structure of 3 has been confirmed by X-ray single crystal diffraction. It is also characterized by UV-vis, IR, Raman spectroscopy and mass spectrometry. The stability, bonding, and electron density distributions of 3 have been studied by theoretical calculations.

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Language(s): eng - English
 Dates: 2015-06-182015
 Publication Status: Published in print
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 Rev. Method: Peer
 Identifiers: DOI: 10.1039/C5SC01516B
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Title: Chemical Science
Source Genre: Journal
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Pages: - Volume / Issue: 6 (9) Sequence Number: - Start / End Page: 5230 - 5234 Identifier: ISSN: 2041-6520