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  Hot Carrier-Induced Tautomerization within a Single Porphycene Molecule on Cu(111)

Ladenthin, J., Grill, L., Gawinkowski, S., Liu, S., Waluk, J., & Kumagai, T. (2015). Hot Carrier-Induced Tautomerization within a Single Porphycene Molecule on Cu(111). ACS Nano, 9(7), 7287-7295. doi:10.1021/acsnano.5b02147.

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 Creators:
Ladenthin, Janina1, Author           
Grill, Leonhard1, 2, Author           
Gawinkowski, Sylwester3, Author
Liu, Shuyi1, Author           
Waluk, Jacek3, Author
Kumagai, Takashi1, Author           
Affiliations:
1Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              
2Universität Graz, ou_persistent22              
3Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, Warsaw 01-224, Poland, ou_persistent22              

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Free keywords: tautomerization; single molecule; scanning tunneling microscopy; metal surface; nonlocal adsorbate reaction; hot carrier transport
 Abstract: Here, we report the study of tautomerization within a single porphycene molecule adsorbed on a Cu(111) surface using low-temperature scanning tunneling microscopy (STM) at 5 K. While molecules are adsorbed on the surface exclusively in the thermodynamically stable trans tautomer after deposition, a voltage pulse from the STM can induce the unidirectional trans → cis and reversible cis ↔ cis tautomerization. From the voltage and current dependence of the tautomerization yield (rate), it is revealed that the process is induced by vibrational excitation via inelastic electron tunneling. However, the metastable cis molecules are thermally switched back to the trans tautomer by heating the surface up to 30 K. Furthermore, we have found that the unidirectional tautomerization can be remotely controlled at a distance from the STM tip. By analyzing the nonlocal process in dependence on various experimental parameters, a hot carrier-mediated mechanism is identified, in which hot electrons (holes) generated by the STM travel along the surface and induce the tautomerization through inelastic scattering with a molecule. The bias voltage and coverage dependent rate of the nonlocal tautomerization clearly show a significant contribution of the Cu(111) surface state to the hot carrier-induced process.

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Language(s): eng - English
 Dates: 2015-04-102015-06-092015-06-092015-07-28
 Publication Status: Issued
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1021/acsnano.5b02147
 Degree: -

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Title: ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 9 (7) Sequence Number: - Start / End Page: 7287 - 7295 Identifier: Other: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851