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  Semiconductor saturable absorbers for ultrafast terahertz signals

Hoffmann, M. C., & Turchinovich, D. (2010). Semiconductor saturable absorbers for ultrafast terahertz signals. Applied Physics Letters, 96(15): 151110. doi:10.1063/1.3386542.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-1C40-0 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-30C7-B
Genre: Journal Article

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http://dx.doi.org/10.1063/1.3386542 (Publisher version)
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http://arxiv.org/abs/1003.1942 (Preprint)
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 Creators:
Hoffmann, Matthias C.1, 2, Author              
Turchinovich, Dmitry3, Author
Affiliations:
1Condensed Matter Dynamics Division, Max Planck Research Department for Structural Dynamics, Department of Physics, University of Hamburg, External Organizations, ou_2173637              
2CFEL, 22607 Hamburg, Germany, ou_persistent22              
3DTU Fotonik - Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark, ou_persistent22              

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Free keywords: Semiconductors; III-V semiconductors; Germanium; Electric fields; Elemental semiconductors
 Abstract: We demonstrate saturable absorber behavior of n-type semiconductorsGaAs,GaP, and Ge in the terahertz (THz) frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and nonsaturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase in the group refractive index of the samples at higher THz pulse peak fields.

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Language(s): eng - English
 Dates: 2010-02-122010-03-192010-04-152010-04-12
 Publication Status: Published in print
 Pages: 3
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1063/1.3386542
arXiv: 1003.1942
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 96 (15) Sequence Number: 151110 Start / End Page: - Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223