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  Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump–terahertz probe measurements

Hebling, J., Hoffmann, M. C., Hwang, H. Y., Yeh, K.-L., & Nelson, K. A. (2010). Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump–terahertz probe measurements. Physical Review B, 81(3): 035201. doi:10.1103/PhysRevB.81.035201.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-1C4E-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-1C4F-1
Genre: Journal Article

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PhysRevB.81.035201.pdf (Publisher version), 285KB
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PhysRevB.81.035201.pdf
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2010
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© American Physical Society
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http://dx.doi.org/10.1103/PhysRevB.81.035201 (Publisher version)
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Locator:
http://arxiv.org/abs/0907.1457 (Preprint)
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 Creators:
Hebling, János1, 2, Author
Hoffmann, Matthias C.1, 3, 4, Author              
Hwang, Harold Y.1, Author
Yeh, Ka-Lo1, Author
Nelson, Keith A.1, Author
Affiliations:
1Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, ou_persistent22              
2Department of Experimental Physics, University of Pécs, 7624 Pécs, Hungary, ou_persistent22              
3Condensed Matter Dynamics Division, Max Planck Research Department for Structural Dynamics, Department of Physics, University of Hamburg, External Organizations, ou_2173637              
4CFEL, Hamburg, Germany, ou_persistent22              

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Free keywords: PACS numbers: 78.47.J-, 71.55.Cn, 72.20.Ht
 Abstract: We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increase in the absorption occurs at intermediate THz pulse energies. The recovery of the free-carrier absorption was monitored by time-resolved THz pump–THz probe measurements. At short probe delay times, the frequency response of germanium cannot be fitted by the Drude model. We attribute these unique phenomena of Ge to dynamical overpopulation of the high mobility Γ conduction-band valley.

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Language(s): eng - English
 Dates: 2009-10-072009-07-082010-01-042010-01-15
 Publication Status: Published in print
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1103/PhysRevB.81.035201
arXiv: 0907.1457
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 81 (3) Sequence Number: 035201 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: /journals/resource/954925225008