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  How branching can change the conductance of ballistic semiconductor devices

Maryenko, D., Metzger, J. J., Fleischmann, R., Geisel, T., Umansky, V., Ospald, F., et al. (2012). How branching can change the conductance of ballistic semiconductor devices. Physical Review B, 85: 195329. doi:10.1103/PhysRevB.85.195329.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-10CB-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-10CC-1
Genre: Journal Article

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 Creators:
Maryenko, Denis, Author
Metzger, Jakob J.1, Author              
Fleischmann, Ragnar1, Author              
Geisel, Theo1, Author              
Umansky, Vladimir, Author
Ospald, Frank, Author
v. Klitzing, Klaus, Author
Smet, Jurgen, Author
Affiliations:
1Department of Nonlinear Dynamics, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society, ou_2063286              

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 Abstract: We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case, even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas, we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time, magnetic focusing peaks are largely unaffected by the disorder potential.

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Language(s): eng - English
 Dates: 2012-05-31
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: eDoc: 634171
DOI: 10.1103/PhysRevB.85.195329
 Degree: -

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Title: Physical Review B
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 85 Sequence Number: 195329 Start / End Page: - Identifier: -