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  Ultrafast THz saturable absorption in doped semiconductors

Turchinovich, D., & Hoffmann, M. C. (2011). Ultrafast THz saturable absorption in doped semiconductors. In 2011 Conference on Lasers and Electro-Optics (CLEO). IEEE.

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 Creators:
Turchinovich, Dmitry1, Author
Hoffmann, Matthias C.2, 3, Author           
Affiliations:
1DTU Fotonik - Department of Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800 Kgs. Lyngby, Denmark, ou_persistent22              
2Condensed Matter Dynamics Division, Max Planck Research Department for Structural Dynamics, Department of Physics, University of Hamburg, External Organizations, ou_2173637              
3CFEL, Notkestr. 85, 22607 Hamburg, Germany, ou_persistent22              

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Free keywords: OCIS codes: 320.7110 - Ultrafast nonlinear optics; 300.6495 - Terahertz spectroscopy; 320.7150 - Ultrafast spectroscopy; 320.5520 - Pulse compression
 Abstract: We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.

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Language(s): eng - English
 Dates: 2011
 Publication Status: Published online
 Pages: 2
 Publishing info: -
 Table of Contents: -
 Rev. Type: Internal
 Identifiers: -
 Degree: -

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Title: Conference on Lasers and Electro-Optics (CLEO)
Place of Event: Baltimore, MD, USA
Start-/End Date: 2011-05-01 - 2011-05-06

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Title: 2011 Conference on Lasers and Electro-Optics (CLEO)
Source Genre: Proceedings
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Publ. Info: IEEE
Pages: - Volume / Issue: - Sequence Number: JThB39 Start / End Page: - Identifier: ISBN: 978-1-4577-1223-4