English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Oxygen adsorbates on the Si(111)4x1-In metallic atomic wire: Scanning tunneling microscopy and density-functional theory calculations

Oh, D. M., Wippermann, S. M., Schmidt, W. G., & Yeom, H. W. (2014). Oxygen adsorbates on the Si(111)4x1-In metallic atomic wire: Scanning tunneling microscopy and density-functional theory calculations. Physical Review B, 90(15): 155432. doi:10.1103/PhysRevB.90.155432.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-4D1A-C Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-4D1B-A
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Oh, Deok Mahn1, 2, Author              
Wippermann, Stefan Martin3, Author              
Schmidt, W. G.4, 5, Author              
Yeom, Han Woong6, 7, Author              
Affiliations:
1Department of Physics, Pohang University of Science and Technology, Pohang 790-784, South Korea, ou_persistent22              
2Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 790-784, South Korea, ou_persistent:22              
3Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863350              
4Lehrstuhl für Theoretische Physik, Universität Paderborn, 33095 Paderborn, Germany, ou_persistent22              
5Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria, ou_persistent22              
6Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 790-784, South Korea, ou_persistent22              
7Department of Physics, Pohang University of Science and Techonlogy, 77 Cheongam-Ro, Pohang 790-784, South Korea, ou_persistent22              

Content

show
hide
Free keywords: -
 Abstract: The Si(111)4x1-In surface is composed of metallic atomic wires, which undergo a transition into a charge density wave phase at a transition temperature (T-c) of 125 K. This T-c was reported recently to substantially increase upon the oxygen adsorption, for which the underlying mechanism is not understood. We investigate the structures of oxygen adsorbates on the Si(111)4x1-In surface by scanning tunneling microscopy (STM) and density-functional theory calculations. We identify three distinct atomic-scale structures induced by the oxygen adsorption with high-resolution STM topography. The calculations find two energetically favorable adsorption sites on and between In zigzag chains, respectively. In conjunction with an additional adsorption configuration, where O is buried underneath the In chain, three stable structures are thus identified that reproduce very well the characteristic bias-dependent STM images. Experimentally, a switching between two specific adsorption structures is observed and is consistent with the structure models proposed. The structural distortions and the charge transfer of In atomic wires around the adsorbates are also characterized. This work provides a solid basis for the microscopic understanding of the intriguing oxygen impurity effect on the phase transition.

Details

show
hide
Language(s): eng - English
 Dates: 2014-10-20
 Publication Status: Published in print
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 90 (15) Sequence Number: 155432 Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: /journals/resource/954925225008