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  Quantitative mapping of fast voltage pulses in tunnel junctions by plasmonic luminescence

Grosse, C., Etzkorn, M., Kuhnke, K., Loth, S., & Kern, K. (2013). Quantitative mapping of fast voltage pulses in tunnel junctions by plasmonic luminescence. Applied Physics Letters, 103(18): 183108. doi:10.1063/1.4827556.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-5BDB-7 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-5BDC-5
Genre: Journal Article

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1.4827556.pdf (Publisher version), 2MB
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2013
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© American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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http://dx.doi.org/10.1063/1.4827556 (Publisher version)
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 Creators:
Grosse, Christoph1, Author
Etzkorn, Markus1, Author
Kuhnke, Klaus1, Author
Loth, Sebastian1, 2, 3, Author              
Kern, Klaus1, 4, Author
Affiliations:
1Max Planck Institute for Solid State Research, ou_persistent22              
2Dynamics of Nanoelectronic Systems, Research Groups, Max Planck Research Department for Structural Dynamics, Department of Physics, University of Hamburg, External Organizations, ou_2173642              
3Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany, ou_persistent22              
4École Polytechnique Fédérale de Lausanne, Institute of Condensed Matter Physics, Bâtiment PH, Station 3, 1015 Lausanne, Switzerland, ou_persistent22              

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Free keywords: Tunnel junctions; Scanning tunneling microscopy; Electric measurements; Photons; Plasmons
 Abstract: An optical read-out technique is demonstrated that enables mapping the time-dependent electrostatic potential in the tunnel junction of a scanning tunneling microscope with millivolt and nanosecond accuracy. We measure the time-dependent intensity of plasmonic light emitted from the tunnel junction upon excitation with a nanosecond voltage pulse. The light intensity is found to be a quantitative measure of the voltage between tip and sample. This permits non-invasive mapping of fast voltage transients directly at the tunnel junction. Knowledge of the pulse profile reaching the tunnel junction is applied to optimize the experiment's time response by actively shaping the incident pulses.

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Language(s): eng - English
 Dates: 2013-09-192013-10-152013-10-302013-10-28
 Publication Status: Published in print
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1063/1.4827556
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 103 (18) Sequence Number: 183108 Start / End Page: - Identifier: Other: 0003-6951
CoNE: /journals/resource/954922836223