Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation 
Techniques

Lau, S.S.; Roth, J.; et al.,

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Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques

Lau, S., Roth, J., & et al. (1979). Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques. Applied Physics Letters, 34, 1, 76-78.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-BAC3-1 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-BAC4-0

Genre: Journal Article

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Creators:
Lau, S.S.¹, Author
Roth, J.², Author
et al.¹, Author

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1External Organizations, ou_persistent22
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288

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Dates: Date issued: 1979

Publication Status: Issued

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Title: Applied Physics Letters

Source Genre: Journal

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Pages: - Volume / Issue: 34, 1 Sequence Number: - Start / End Page: 76 - 78 Identifier: -