Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation 
Techniques

Lau, S.S.; Roth, J.; et al.,

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Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques

Lau, S., Roth, J., & et al. (1979). Improvement of Crystalline Quality of Epitaxial Si Layers by Ion-Implantation Techniques. Applied Physics Letters, 34, 1, 76-78.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-BAC3-1 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-BAC4-0

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Urheber:
Lau, S.S.¹, Autor
Roth, J.², Autor
et al.¹, Autor

Affiliations:
1External Organizations, ou_persistent22
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288