The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and 
Sputtered Amorphous Silicon

Wittmer, M.; Baglin, E.E.; Roth, J.; Mayer, J.W.

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The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon

Wittmer, M., Baglin, E., Roth, J., & Mayer, J. (1978). The Influence of Noble Gas Atoms on the Epitaxial Growth of Implanted and Sputtered Amorphous Silicon. In Thin Films Phenomena - Interfaces and Interactions (pp. 107-126).

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-BC2D-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-BC2E-E

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Creators:
Wittmer, M.¹, Author
Baglin, E.E.¹, Author
Roth, J.², Author
Mayer, J.W.¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288

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Dates: Date issued: 1978

Publication Status: Issued

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Title: Thin Films Phenomena - Interfaces and Interactions

Source Genre: Book

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Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 107 - 126 Identifier: -