Trapping of D in SiC and Damage Due to Implantation

Siegele, R.; Roth, J.; Scherzer, B.M.U.; et al.,

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Trapping of D in SiC and Damage Due to Implantation

Siegele, R., Roth, J., Scherzer, B., & et al. (1990). Trapping of D in SiC and Damage Due to Implantation. Journal of Nuclear Materials, 176 + 177, 1010-1017.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-C6A4-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-C6A5-4

Genre: Journal Article

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Creators:
Siegele, R.¹, Author
Roth, J.¹, Author
Scherzer, B.M.U.², Author
et al.², Author

Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288
2External Organizations, ou_persistent22

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Dates: Date issued: 1990

Publication Status: Issued

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Title: Journal of Nuclear Materials

Source Genre: Journal

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Pages: - Volume / Issue: 176 + 177 Sequence Number: - Start / End Page: 1010 - 1017 Identifier: -