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  Trapping of D in SiC and Damage Due to Implantation

Siegele, R., Roth, J., Scherzer, B., & et al. (1990). Trapping of D in SiC and Damage Due to Implantation. Journal of Nuclear Materials, 176 + 177, 1010-1017.

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Siegele, R.1, Author           
Roth, J.1, Author           
Scherzer, B.M.U.2, Author
et al.2, Author
Affiliations:
1Surface Science (OP), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856288              
2External Organizations, ou_persistent22              

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 Dates: 1990
 Publication Status: Issued
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Title: Journal of Nuclear Materials
Source Genre: Journal
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Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 176 + 177 Sequence Number: - Start / End Page: 1010 - 1017 Identifier: -