High-Speed Switching of Far-Infared Radiation by Photoionisation in a 
Semiconductor

Vogel, T.; Dodel, G.; Holzhauser, E.; Salzmann, H.; Theurer, A.

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High-Speed Switching of Far-Infared Radiation by Photoionisation in a Semiconductor

Vogel, T., Dodel, G., Holzhauser, E., Salzmann, H., & Theurer, A. (1991). High-Speed Switching of Far-Infared Radiation by Photoionisation in a Semiconductor. Appl. Optics, 30.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-CA7E-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0028-CA7F-9

Genre: Journal Article

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Creators:
Vogel, T.¹, Author
Dodel, G.², Author
Holzhauser, E.¹, Author
Salzmann, H.³, Author
Theurer, A.¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Max Planck Institute for Plasma Physics, ou_persistent27
3Experimental Plasma Physics 1 (E1), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856295

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Dates: Date issued: 1991

Publication Status: Issued

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Title: Appl. Optics

Source Genre: Journal

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Pages: - Volume / Issue: 30 Sequence Number: - Start / End Page: - Identifier: -