Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room 
Temperature

Kou, L. Z.; Yan, B. H.; Hu, F. M.; Wu, S. C.; Wehling, T. O.; Felser, C.; Chen, C. F.; Frauenheim, T.

doi:10.1021/nl4037214

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Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature

Kou, L. Z., Yan, B. H., Hu, F. M., Wu, S. C., Wehling, T. O., Felser, C., et al. (2013). Graphene-Based Topological Insulator with an Intrinsic Bulk Band Gap above Room Temperature. Nano Letters, 13(12), 6251-6255. doi:10.1021/nl4037214.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-84B0-7 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-84B1-5

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Kou, L. Z., Author
Yan, B. H.¹, Author
Hu, F. M., Author
Wu, S. C., Author
Wehling, T. O., Author
Felser, C., Author
Chen, C. F., Author
Frauenheim, T., Author

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1Max Planck Institute for the Physics of Complex Systems, Max Planck Society, ou_2117288

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Dates: Date issued: 2013-12

Publication Status: Issued

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Identifiers: eDoc: 677297
ISI: 000328439200076
DOI: 10.1021/nl4037214

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Title: Nano Letters

Source Genre: Journal

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Pages: - Volume / Issue: 13 (12) Sequence Number: - Start / End Page: 6251 - 6255 Identifier: ISSN: 1530-6984