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  Protective capping of topological surface states of intrinsically insulating Bi2Te3

Hoefer, K., Becker, C., Wirth, S., & Tjeng, L. H. (2015). Protective capping of topological surface states of intrinsically insulating Bi2Te3. AIP Advances, 5(9): 097139, pp. 1-6. doi:10.1063/1.4931038.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-F0D1-F Version Permalink: http://hdl.handle.net/21.11116/0000-0004-D59A-E
Genre: Journal Article

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 Creators:
Hoefer, Katharina1, Author              
Becker, Christoph2, Author              
Wirth, Steffen3, Author              
Tjeng, Liu Hao4, Author              
Affiliations:
1Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_persistent22              
2Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
3Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863460              
4Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863452              

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 Abstract: We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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Language(s): eng - English
 Dates: 2015-09-112015-09-11
 Publication Status: Published in print
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 Rev. Method: -
 Identifiers: ISI: 000362562100046
DOI: 10.1063/1.4931038
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Title: AIP Advances
Source Genre: Journal
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Pages: - Volume / Issue: 5 (9) Sequence Number: 097139 Start / End Page: 1 - 6 Identifier: ISSN: 2158-3226
CoNE: https://pure.mpg.de/cone/journals/resource/21583226