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  Cs-Doped Mo as Surface Converter for H-/D- Generation in Negative Ion Sources: First Steps and Proof of Principle

Schiesko, L., Cartry, G., Hopf, C., Höschen, T., Meisl, G., Encke, O., et al. (2015). Cs-Doped Mo as Surface Converter for H-/D- Generation in Negative Ion Sources: First Steps and Proof of Principle. AIP Conference Proceedings, 1655: 020003. doi:10.1063/1.4916412.

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http://dx.doi.org/10.1063/1.4916412 (Publisher version)
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 Creators:
Schiesko, L.1, Author           
Cartry, G.2, Author
Hopf, C.1, Author           
Höschen, T.3, Author           
Meisl, G.3, Author           
Encke, O.3, Author           
Franzen, P.1, Author           
Heinemann, B.1, Author           
Achkasov, K.2, Author
Hopf, C.1, Author           
Fantz, U.1, Author           
Affiliations:
1ITER Technology & Diagnostics (ITED), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856290              
2External Organizations, ou_persistent22              
3Plasma Edge and Wall (E2M), Max Planck Institute for Plasma Physics, Max Planck Society, ou_1856327              

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Free keywords: Konferenzbeitrag
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Language(s): eng - English
 Dates: 2015
 Publication Status: Issued
 Pages: 5 p.
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.4916412
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Title: AIP Conference Proceedings
  Abbreviation : AIP Conf. Proc.
  Subtitle : 4th International Symposium on Negative Ions, Beams and Sources (NIBS 2014), Garching, 2014-10-06 to 2014-10-10
Source Genre: Journal
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Publ. Info: Melville, NY : AIP Publishing
Pages: - Volume / Issue: 1655 Sequence Number: 020003 Start / End Page: - Identifier: ISSN: 0094-243X
CoNE: https://pure.mpg.de/cone/journals/resource/954928528968