Unipolar resistive switching in metal oxide/organic semiconductor non-volatile 
memories as a critical phenomenon

Bory, B. F.; Rocha, Paulo R. F.; Gomes, H. L.; de Leeuw, Dago M.; Meskers, S. C. J.

doi:10.1063/1.4936349

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Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

Bory, B. F., Rocha, P. R. F., Gomes, H. L., de Leeuw, D. M., & Meskers, S. C. J. (2015). Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon. Journal of Applied Physics, 118(20 ): 205503. doi:10.1063/1.4936349.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-591E-3 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0029-591F-1

Genre: Journal Article

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Creators:
Bory, B. F., Author
Rocha, Paulo R. F.¹, Author
Gomes, H. L., Author
de Leeuw, Dago M.¹, Author
Meskers, S. C. J., Author

Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284

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Language(s): eng - English

Dates: Date issued: 2015

Publication Status: Issued

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Identifiers: DOI: 10.1063/1.4936349

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Title: Journal of Applied Physics

Abbreviation : J. Appl. Phys.

Source Genre: Journal

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Publ. Info: New York, NY : AIP Publishing

Pages: - Volume / Issue: 118 (20 ) Sequence Number: 205503 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880