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  Titanium nitride as a seed layer for Heusler compounds

Niesen, A., Glas, M., Ludwig, J., Schmalhorst, J.-M., Sahoo, R., Ebke, D., et al. (2015). Titanium nitride as a seed layer for Heusler compounds. Journal of Applied Physics, 118(24): 243904, pp. 1-7. doi:10.1063/1.4938388.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-78A7-2 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-7774-6
Genre: Journal Article

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 Creators:
Niesen, Alessia1, Author
Glas, Manuel1, Author
Ludwig, Jana1, Author
Schmalhorst, Jan-Michael1, Author
Sahoo, Roshnee2, Author              
Ebke, Daniel3, Author              
Arenholz, Elke1, Author
Reiss, Guenter1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Daniel Ebke, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863430              

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 Abstract: Titanium nitride (TiN) shows low resistivity at room temperature (27 mu Omega cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer. (C) 2015 AIP Publishing LLC.

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Language(s): eng - English
 Dates: 2015-12-282015-12-28
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000367535100012
DOI: 10.1063/1.4938388
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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 118 (24) Sequence Number: 243904 Start / End Page: 1 - 7 Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880