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  Impurity-mediated early condensation of an atomic layer electronic crystal: oxygen-adsorbed In/Si(111)-(4×1)/(8×2)

Wippermann, S. M., Schmidt, W. G., Oh, D. M., & Yeom, H. W. (2015). Impurity-mediated early condensation of an atomic layer electronic crystal: oxygen-adsorbed In/Si(111)-(4×1)/(8×2). Talk presented at DPG Spring Meeting 2015. Berlin, Germany. 2015-03-15 - 2015-03-20.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-7DF0-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-7DF1-1
Genre: Talk

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 Creators:
Wippermann, Stefan Martin1, Author              
Schmidt, Wolf Gero2, Author              
Oh, Deok Mahn3, Author              
Yeom, Han Woong4, Author              
Affiliations:
1Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863350              
2Lehrstuhl für Theoretische Physik, Universität Paderborn, 33095 Paderborn, Germany, ou_persistent22              
3Department of Physics, Pohang University of Science and Technology, Pohang 790-784, South Korea, ou_persistent22              
4Department of Physics, Pohang University of Science and Techonlogy, 77 Cheongam-Ro, Pohang 790-784, South Korea, ou_persistent22              

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Language(s): eng - English
 Dates: 2015-03
 Publication Status: Not specified
 Pages: -
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 Rev. Method: -
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Title: DPG Spring Meeting 2015
Place of Event: Berlin, Germany
Start-/End Date: 2015-03-15 - 2015-03-20

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