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  On the theoretical description of photoluminescence in disordered quantum structures

Rubel, O., Baranovskii, S. D., Hantke, K., Heber, J. D., Koch, J., Thomas, P., et al. (2005). On the theoretical description of photoluminescence in disordered quantum structures. Journal of Optoelectronics and Advanced Materials, 7(1), 115-120.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-B53A-0 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-B53B-E
Genre: Journal Article

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 Creators:
Rubel, Oleg, Author
Baranovskii, S. D., Author
Hantke, Kristian1, Author              
Heber, J. D., Author
Koch, J., Author
Thomas, P., Author
Marshall, J. M., Author
Stolz, W., Author
Rühle, W. W., Author
Affiliations:
1Group Nonlinear laser spectroscopy, Department of Dynamics of Complex Fluids, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society, ou_2063305              

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Free keywords: Alloy quantum wells, Photoluminescence, Localized states, Disorder
 Abstract: A theory is suggested for the description of luminescence in semiconductor structures, with the essential role of localized states caused by disorder. The theory is based on the set of rate equations. In contrast to most previous theoretical studies, electrons and holes are treated not in the form of excitons but rather as independent species. Theoretical results are compared with new experimental data for the time-resolved photoluminescence in GaInNAs/GaAs quantum wells

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Language(s): eng - English
 Dates: 2005-02-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: BibTex Citekey: rubel_theoretical_2005
 Degree: -

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Title: Journal of Optoelectronics and Advanced Materials
Source Genre: Journal
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Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 7 (1) Sequence Number: - Start / End Page: 115 - 120 Identifier: ISSN: 1454-4164
CoNE: /journals/resource/110985820565040