ausblenden:
Schlagwörter:
Alloy quantum wells, Photoluminescence, Localized states, Disorder
Zusammenfassung:
A theory is suggested for the description of luminescence in semiconductor structures, with
the essential role of localized states caused by disorder. The theory is based on the set of rate
equations. In contrast to most previous theoretical studies, electrons and holes are treated not
in the form of excitons but rather as independent species. Theoretical results are compared
with new experimental data for the time-resolved photoluminescence in GaInNAs/GaAs
quantum wells
