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Abstract:
We present results of experimental and theoretical studies of thermal quenching of the photoluminescence intensity in (GaIn)(NAs)/GaAs quantum wells after various postgrowth treatments. The experimental data are well described in the framework of a phenomenological model, if thermal emission of excitons out of localized states into delocalized states at the mobility edge prior to their non-radiative recombination is taken into account. Comparison between theoretical results and experimental data yields such material parameters as the energy scale of the band tail and the relative concentrations of non-radiative centers and traps.
