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  Nuclear spin polarization transfer across an organic-semiconductor interface

Goehring, L., & Michal, C. A. (2003). Nuclear spin polarization transfer across an organic-semiconductor interface. The Journal of Chemical Physics, 119(19), 10325-10329. doi:10.1063/1.1617975.

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 Creators:
Goehring, Lucas1, Author           
Michal, Carl A., Author
Affiliations:
1Group Pattern formation in the geosciences, Department of Dynamics of Complex Fluids, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society, ou_2063304              

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 Abstract: Motivated by Tycko’s proposal to harness optically pumped nuclear spinpolarization for the enhancement of nuclear magnetic resonance(NMR) signals from biological macromolecules, we investigate the transfer of thermal nuclear spinpolarization between 1H or 19F in an organic overlayer and 31P at the surface of micron-sized InP particles by Hartmann–Hahn cross polarization. Comparison with analytic and numerical models indicates that the total quantity of polarization transferred across the semiconductor-organic interface is limited by the relatively short room-temperature 1H T1ρ (11 ms) and the slow diffusion of nuclear spinpolarization in the semiconductor.Models and spin-counting experiments indicate that we are able to transfer approximately 20% of the total nuclear spinpolarization originating in the organic overlayer to the semiconductor, supporting the feasibility of transferred optically pumped NMR.

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Language(s): eng - English
 Dates: 2003-10-292003
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1063/1.1617975
BibTex Citekey: goehring_nuclear_2003
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Title: The Journal of Chemical Physics
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Institute of Physics
Pages: - Volume / Issue: 119 (19) Sequence Number: - Start / End Page: 10325 - 10329 Identifier: ISSN: 0021-9606
CoNE: https://pure.mpg.de/cone/journals/resource/954922836226