Deutsch
 
Hilfe Datenschutzhinweis Impressum
  DetailsucheBrowse

Datensatz

 
 
DownloadE-Mail
  Bilayer SnS2: Tunable stacking sequence by charging and loading pressure

Bacaksiz, C., Cahangirov, S., Rubio, A., Senger, R. T., Peeters, F. M., & Sahin, H. (2016). Bilayer SnS2: Tunable stacking sequence by charging and loading pressure. Physical Review B, 93(12): 125403. doi:10.1103/PhysRevB.93.125403.

Item is

Basisdaten

einblenden: ausblenden:
Genre: Zeitschriftenartikel

Dateien

einblenden: Dateien
ausblenden: Dateien
:
PhysRevB.93.125403.pdf (Verlagsversion), 3MB
Name:
PhysRevB.93.125403.pdf
Beschreibung:
-
OA-Status:
Sichtbarkeit:
Öffentlich
MIME-Typ / Prüfsumme:
application/pdf / [MD5]
Technische Metadaten:
Copyright Datum:
2016
Copyright Info:
© American Physical Society

Externe Referenzen

einblenden:
ausblenden:
externe Referenz:
http://dx.doi.org/10.1103/PhysRevB.93.125403 (Verlagsversion)
Beschreibung:
-
OA-Status:
externe Referenz:
http://arxiv.org/abs/1602.01824 (Preprint)
Beschreibung:
-
OA-Status:

Urheber

einblenden:
ausblenden:
 Urheber:
Bacaksiz, C.1, Autor
Cahangirov, S.2, Autor
Rubio, Angel3, 4, 5, Autor           
Senger, R. T.1, Autor
Peeters, F. M.6, Autor
Sahin, H.6, Autor
Affiliations:
1Department of Physics, Izmir Institute of Technology, 35430 Izmir, Turkey, ou_persistent22              
2UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey, ou_persistent22              
3Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2074320              
4Nano-Bio Spectroscopy Group and ETSF, Departamento de Física de Materiales, Universidad del Pais Vasco, CFM CSIC-UPV/EHU-MPC and DIPC, 20018 San Sebastian, Spain, ou_persistent22              
5Center for Free-Electron Laser Science, Luruper Chaussee 149, 22761 Hamburg, Germany, ou_persistent22              
6Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium, ou_persistent22              

Inhalt

einblenden:
ausblenden:
Schlagwörter: Mesoscale and Nanoscale Physics
 Zusammenfassung: Employing density functional theory–based methods, we investigate monolayer and bilayer structures of hexagonal SnS2, which is a recently synthesized monolayer metal dichalcogenide. Comparison of the 1H and 1T phases of monolayer SnS2 confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS2 is weaker than that of typical transition-metal dichalcogenides so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. A possible signature of the stacking order in the SnS2 bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS2. It is found that (i) the electric field increases the coupling between the layers at its preferred stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E field and under sufficient E field, the bilayer SnS2 can become a semimetal, (iii) the most favorable stacking order can be switched by charging, and (iv) a loading pressure exceeding 3 GPa changes the stacking order. The E-field tunable band gap and easily tunable stacking sequence of SnS2 layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.

Details

einblenden:
ausblenden:
Sprache(n): eng - English
 Datum: 2016-01-132016-03-032016-03-15
 Publikationsstatus: Erschienen
 Seiten: 9
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: DOI: 10.1103/PhysRevB.93.125403
arXiv: 1602.01824
 Art des Abschluß: -

Veranstaltung

einblenden:

Entscheidung

einblenden:

Projektinformation

einblenden:

Quelle 1

einblenden:
ausblenden:
Titel: Physical Review B
  Kurztitel : Phys. Rev. B
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 93 (12) Artikelnummer: 125403 Start- / Endseite: - Identifikator: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008