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  Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

Brumme, T., Calandra, M., & Mauri, F. (2016). Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect. Physical Review B, 93(8): 081407(R). doi:10.1103/PhysRevB.93.081407.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002A-0A71-D Version Permalink: http://hdl.handle.net/21.11116/0000-0004-918F-7
Genre: Journal Article

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PhysRevB.93.081407.pdf (Publisher version), 493KB
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supmat.pdf (Supplementary material), 412KB
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http://dx.doi.org/10.1103/PhysRevB.93.081407 (Publisher version)
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http://arxiv.org/abs/1602.00893 (Preprint)
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 Creators:
Brumme, Thomas1, 2, Author              
Calandra, Matteo1, Author
Mauri, Francesco3, Author
Affiliations:
1CNRS, UMR 7590, Sorbonne Universités, UPMC Univ Paris 06, IMPMC - Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, 4 place Jussieu, F-75005, Paris, France, ou_persistent22              
2Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2074320              
3Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy, ou_persistent22              

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 Abstract: The transition-metal dichalcogenides have attracted a lot of attention as a possible stepping-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two successive scattering events—the transport scattering time. In a recent report, we have shown that it is possible to use density functional theory to obtain the band structure of two-dimensional semiconductors in the presence of field effect doping. Here, we report a simple method to extract the scattering time from the experimental conductivity and from the knowledge of the band structure. We apply our approach to monolayers and multilayers of MoS2, MoSe2, MoTe2, WS2, and WSe2 in the presence of a gate. In WS2, for which accurate measurements of mobility have been published, we find that the scattering time is inversely proportional to the density of states at the Fermi level. Finally, we show that it is possible to identify the critical doping at which different valleys start to be occupied from the doping dependence of the conductivity.

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Language(s): eng - English
 Dates: 2015-12-102016-02-122016-02-15
 Publication Status: Published in print
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.93.081407
arXiv: 1602.00893
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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 93 (8) Sequence Number: 081407(R) Start / End Page: - Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008