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Abstract:
Controlled in-plane rotation of the magnetic easy axis in manganite
heterostructures by tailoring the interface oxygen network could allow
the development of correlated oxide-based magnetic tunnelling junctions
with non-collinear magnetization, with possible practical applications
as miniaturized high-switching-speed magnetic random access memory
(MRAM) devices. Here, we demonstrate how to manipulate magnetic and
electronic anisotropic properties in manganite heterostructures by
engineering the oxygen network on the unit-cell level. The strong oxygen
octahedral coupling is found to transfer the octahedral rotation,
present in the NdGaO3 (NGO) substrate, to the La2/3Sr1/3MnO3 (LSMO) film
in the interface region. This causes an unexpected realignment of the
magnetic easy axis along the short axis of the LSMO unit cell as well as
the presence of a giant anisotropic transport in these ultrathin LSMO
films. As a result we possess control of the lateral magnetic and
electronic anisotropies by atomic-scale design of the oxygen octahedral
rotation.
